Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI
نویسندگان
چکیده
We investigated the electrical and structural properties of TbScO3 as an alternative gate dielectric. Rutherford backscattering spectrometry revealed a stoichiometric film while X-ray photo-electron spectroscopy indicated silicate formation at the interface. Capacitance-Voltage measurements resulted in well behaving C-V curves with no hysteresis and a low density of interface trap states in the range of 4x10 (eVcm). Fully depleted (FD) SOI and sSOI MOSFETs fabricated with a full replacement gate process show a steep subthreshold slope down to 81 mV/dec and high Ion/Ioff ratios up to 10. Low field electron mobilities of 181 cm/Vsec for SOI and 350 cm/Vsec for sSOI, were extracted, which are comparable to MOSFETs with Hf based oxides. Gate induced drain leakage (GIDL) investigations indicate a trap assisted band to band tunneling.
منابع مشابه
Transport in Thin-Body MOSFETs Fabricated in Strained Si and Strained Si/SiGe Heterostructures on Insulator
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...
متن کاملScalability of FinFETs and Unstrained–Si/Strained–Si FDSOI–MOSFETs
Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off–current of 100 nA/μm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained–Si FDSOI–MOSFET always involves the larg...
متن کاملImplications of gate tunneling and quantum effects on compact modeling in the gate-channel stack
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leaky MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
متن کاملCharacterization of High-κ Gate Stacks in Metal- Oxide-semiconductor Capacitors
LI, WENMEI. Characterization of High-κ Gate Stacks in Metal-Oxide-Semiconductor Capacitors. (Under the direction of Dr. Dennis M. Maher) The purpose of this research has been to use off-line characterization techniques to establish material-specific properties of gate-stack constituents (i.e., high-κ dielectric stacks and electrodes) and complete gate-stack structures. Hence, the characterizati...
متن کاملImpact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...
متن کامل